Document Number: 91258

www.vishay.com

S11-0111-Rev. C, 07-Feb-11

1

Power MOSFET

IRFPS37N50A, SiHFPS37N50A

Vishay Siliconix

FEATURES

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Full Bridge Converters

• Power Factor Correction Boost

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

500

0.13

180

46

71

Configuration

Single

N-Channel MOSFET

G

D

S

S

D

G

Super-247

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Super-247

Lead (Pb)-free

IRFPS37N50APbF

SiHFPS37N50A-E3

SnPb

IRFPS37N50A

SiHFPS37N50A

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Continuous Drain Current

36

A

23

144

Linear Derating Factor

3.6

W/°C

1260

mJ

36

A

44

mJ

Maximum Power Dissipation

446

W

dV/dt

3.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply