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IRF730 датащи(PDF) 4 Page - Vishay Siliconix |
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IRF730 датащи(HTML) 4 Page - Vishay Siliconix |
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4 / 9 page ![]() www.vishay.com Document Number: 91047 4 S11-0508-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF730, SiHF730 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 91047_05 C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 1500 1200 900 0 300 600 100 101 VDS, Drain-to-Source Voltage (V) 91047_06 I D = 3.5 A For test circuit see figure 13 V DD = 80 V V DD = 200 V V DD = 320 V QG, Total Gate Charge (nC) 20 16 12 8 0 4 010 50 40 30 20 91047_07 25 °C 150 °C V GS = 0 V 101 100 VSD, Source-to-Drain Voltage (V) 0.6 1.0 0.9 0.8 0.7 1.1 1.2 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) T C = 25 °C T J = 150 °C Single Pulse 91047_08 VDS, Drain-to-Source Voltage (V) 102 0.1 2 5 1 2 5 10 2 5 25 1 25 10 25 102 25 103 25 104 0.1 |
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