OP505D datasheet(4/10 Pages) TTELEC

номер детали	OP505D

подробное описание детали	NPN Silicon Phototransistor

PDF	10 Pages

Scroll/Zoom	100%

производитель	TTELEC [TT Electronics.]

домашняя страница	http://www.ttelectronics.com/

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4 / 10 page

General Note

TT Electronics reserves the right to make changes in product specification without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

OP505, OP505W, OP506, OP506W

OP535, OP705

Issue B

08/2016

Page 4

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Electrical Characteristics ( TA = 25° C unless otherwise noted )

OP535

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

IC(ON)

On-State Collector Current

OP535A

OP535B

10.5

3.5

32.0

VCE = 5 V, EE = 0.13 mW/cm

2, Note 3

VCE(SAT)

Collector-Emitter Saturation Voltage

1.10

IC = 400 μA, EE = 0.13 mW/cm

2 , Note 3

ICEO

Collector-Dark Current

100

VCE = 10 V, EE = 0

V(BR)CEO

Collector-Emitter Breakdown Voltage

15.0

IC = 1.0 mA, EE = 0

V(BR)ECO

Emitter-Collector Breakdown Voltage

5.0

IE = 100 μA, EE = 0

Electrical Specifications

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