TECHNICAL DATA

PNP SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/396

Devices

Qualified Level

2N3762

2N3762L

2N3763

2N3763L

2N3764

2N3765

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

2N3762*

2N3764

2N3763*

2N3765

Unit

Collector-Emitter Voltage

40

60

Vdc

Collector-Base Voltage

40

60

Vdc

Emitter-Base Voltage

5.0

Vdc

Collector Current

1.5

Adc

2N3762*

1

2N3763*

2N3764

2

2N3765

Total Power Dissipation

1.0

0.5

W

Operating & Storage Junction Temp. Range

-55 to +200

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

2N3762*

2N3763*

2N3764

2N3765

Thermal Resistance Junction-to-Case

60

88

*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices

1) Derate linearly at 5.71 mW/

2) Derate linearly at 2.86 mW/

TO-39* (TO-205AD)

2N3762, 2N3763

TO-5*

2N3762L, 2N3763L

TO-46* (TO-206AB)

2N3764, 2N3765

*See appendix A for

package outline

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

2N3762, 2N3764

2N3763, 2N3765

40

60

Vdc

Collector-Base Cutoff Current

2N3762, 2N3764

2N3763, 2N3765

2N3762, 2N3764

2N3763, 2N3765

100

100

10

10

ηAdc

µAdc

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