2N6547 datasheet(1/2 Pages) MICROSEMI

номер детали	2N6547

подробное описание детали	NPN POWER SILICON TRANSISTOR

PDF	2 Pages

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производитель	MICROSEMI [Microsemi Corporation]

домашняя страница	http://www.microsemi.com

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TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/525

Devices

Qualified Level

2N6546

2N6547

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

2N6546

2N6547

Units

Collector-Emitter Voltage

VCEO

300

400

Vdc

Collector-Base Voltage

VCEX

600

850

Vdc

Emitter-Base Voltage

VEBO

8

Vdc

Base Current

IB

10

Adc

Collector Current

IC

15

Adc

Total Power Dissipation

@ TC = +25

0C (1)

@ TC = +100

0C (1)

PT

175

100

W

Operating & Storage Temperature Range

Top, Tstg

-65 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

1.0

0C/W

1) Between TC = +25

0C and TC = +2000C, linear derating factor (average) = 1.0 W/0C

TO-3 (TO-204AA)*

*See Appendix A for Package

Outline

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 100 mAdc

2N6546

2N6547

V(BR)CEO

300

400

Vdc

Collector-Emitter Cutoff Current

VCE = 600 Vdc; VBE = 1.5 Vdc

2N6546

VCE = 850 Vdc; VBE = 1.5 Vdc

2N6547

ICEX

1.0

mAdc

Emitter-Base Cutoff Current

VEB = 8 Vdc

IEBO

1.0

mAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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