поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

IRFN9140 датащи(PDF) 2 Page - International Rectifier

номер детали IRFN9140
подробное описание детали  POWER MOSFET SURFACE MOUNT (SMD-1)
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRFN9140 датащи(HTML) 2 Page - International Rectifier

  IRFN9140 Datasheet HTML 1Page - International Rectifier IRFN9140 Datasheet HTML 2Page - International Rectifier IRFN9140 Datasheet HTML 3Page - International Rectifier IRFN9140 Datasheet HTML 4Page - International Rectifier IRFN9140 Datasheet HTML 5Page - International Rectifier IRFN9140 Datasheet HTML 6Page - International Rectifier IRFN9140 Datasheet HTML 7Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
IRFN9140
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
1.0
RthJ-PCB
Junction to PC Board
4.0
Soldered to a copper-clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
-18
ISM
Pulse Source Current (Body Diode) ➀
-72
VSD
Diode Forward Voltage
-5.0
V
Tj = 25°C, IS = -18A, VGS = 0V ➃
trr
Reverse Recovery Time
280
nS
Tj = 25°C, IF = -18A, di/dt ≤-100A/µs
QRR Reverse Recovery Charge
3.6
µc
VDD ≤ -30V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
V
VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
-0.087
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.20
VGS = -10V, ID = -11A➃
Resistance
0.22
VGS = -10V, ID = -18A ➃
VGS(th)
Gate Threshold Voltage
-2.0
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
6.2
S ( )
VDS > -15V, IDS = -11A➃
IDSS
Zero Gate Voltage Drain Current
-25
VDS= -80V, VGS= 0V
-250
VDS = -80V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
100
VGS = 20V
Qg
Total Gate Charge
60
VGS = -10V, ID= -18A
Qgs
Gate-to-Source Charge
13
nC
VDS = -50V
Qgd
Gate-to-Drain (‘Miller’) Charge
35.2
td(on)
Turn-On Delay Time
35
VDD = -50V, ID = -18A
tr
Rise Time
85
RG = 9.1Ω, VGS = -10V
td(off)
Turn-Off Delay Time
85
tf
Fall Time
65
LS + LD
Total Inductance
4.0
Ciss
Input Capacitance
1400
VGS = 0V, VDS = -25V
Coss
Output Capacitance
600
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
200
nA
nH
ns
µA
Measured from the center of
drain pad to center of source
pad
Note: Corresponding Spice and Saber models are available on International Rectifier Website.



Html Pages

1 2 3 4 5 6 7


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com