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IRFN9140 датащи(PDF) 2 Page - International Rectifier |
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IRFN9140 датащи(HTML) 2 Page - International Rectifier |
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2 / 7 page ![]() IRFN9140 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case — — 1.0 RthJ-PCB Junction to PC Board — 4.0 — Soldered to a copper-clad PC board °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -18 ISM Pulse Source Current (Body Diode) ➀ — — -72 VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -18A, VGS = 0V ➃ trr Reverse Recovery Time — — 280 nS Tj = 25°C, IF = -18A, di/dt ≤-100A/µs QRR Reverse Recovery Charge — — 3.6 µc VDD ≤ -30V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.087 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.20 VGS = -10V, ID = -11A➃ Resistance — — 0.22 VGS = -10V, ID = -18A ➃ VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 6.2 — — S ( ) VDS > -15V, IDS = -11A➃ IDSS Zero Gate Voltage Drain Current — — -25 VDS= -80V, VGS= 0V — — -250 VDS = -80V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V Qg Total Gate Charge — — 60 VGS = -10V, ID= -18A Qgs Gate-to-Source Charge — — 13 nC VDS = -50V Qgd Gate-to-Drain (‘Miller’) Charge — — 35.2 td(on) Turn-On Delay Time — — 35 VDD = -50V, ID = -18A tr Rise Time — — 85 RG = 9.1Ω, VGS = -10V td(off) Turn-Off Delay Time — — 85 tf Fall Time — — 65 LS + LD Total Inductance — 4.0 — Ciss Input Capacitance — 1400 VGS = 0V, VDS = -25V Coss Output Capacitance — 600 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 200 — nA nH ns µA Ω Measured from the center of drain pad to center of source pad Note: Corresponding Spice and Saber models are available on International Rectifier Website. |
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