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© 2002 IXYS All rights reserved

IGBT

Symbol

Conditions

Maximum Ratings

V

CES

T

1200

V

V

GES

± 20

V

I

C25

T

25°C

100

A

I

C90

T

90°C

65

A

I

CM

V

100

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

V

CES

t

SC

V

10

µs

(SCSOA)

non-repetitive

P

tot

T

445

W

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

V

CE(sat)

I

25°C

2.1

2.7

V

T

2.5

V

V

GE(th)

I

4.5

6.5

V

I

CES

V

25°C

0.1

mA

T

0.1

mA

I

GES

V

200

nA

t

d(on)

150

ns

t

r

60

ns

t

d(off)

700

ns

t

f

50

ns

E

on

7.2

mJ

E

off

6.0

mJ

C

ies

V

3.8

nF

Q

Gon

V

500

nC

R

thJC

0.28 K/W

Inductive load, T

V

V

±15 V; R

I

C25

= 100 A

V

CES

= 1200 V

V

in miniBLOC package

Advanced Technical Information

IXYS Semiconductor GmbH

Edisonstr. 15,

D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

IXEN 60N120

IXEN 60N120D1

Features

- low saturation voltage

- positive temperature coefficient for

easy paralleling

- fast switching

- short tail current for optimized

performance in resonant circuits

• miniBLOC package

- isolated copper base plate

- screw terminals

- kelvin emitter terminal for easy drive

- industry standard outline

Applications

• single switches

and with complementary free wheeling

diodes

• choppers

• phaselegs, H bridges, three phase

bridges e.g. for

- power supplies, UPS

- AC, DC and SR drives

- induction heating

C = Collector

G = Gate

E = Emitter *

* Either Emitter terminal can be used as Main or Kelvin Emitter

miniBLOC, SOT-227 B

E153432

G

E

C

E

IXEN 60N120

IXEN 60N120D1

G

E

C

G

E

C