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BAS16W датащи(PDF) 1 Page - Diotec Semiconductor

номер детали BAS16W
подробное описание детали  SMD Small Signal Diodes
PDF  2 Pages
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производитель  DIOTEC [Diotec Semiconductor]
домашняя страница  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BAS16W датащи(HTML) 1 Page - Diotec Semiconductor

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BAS16W, BAW56W, BAV70W, BAV99W
BAS16W, BAW56W, BAV70W, BAV99W
SMD Small Signal Diodes
SMD Kleinsignal-Dioden
IFAV = 150 mA
VF1 < 0.715 V
Tjmax = 150°C
VRRM = 85 V
IFSM1 = 2 A
trr
< 4 ns
Version 2018-01-23
SOT-323
Dimensions - Maße [mm]
Typical Applications
Signal processing, High-speed
Switching, Rectifying
Commercial grade 1)
Typische Anwendungen
Signalverarbeitung, Schnelles
Schalten, Gleichrichten
Standardausführung 1)
Features
Very high switching speed
Low junction capacitance
Low leakage current
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Extrem schnelles Schalten
Niedrige Sperrschichtkapazität
Niedriger Sperrstrom
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped and reeled
3000 / 7“
Gegurtet auf Rolle
Weight approx.
0.01 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
Single
Diode
BAS16W
1 = A 2 = n. c. 3 = C
Type
Code
A6
Common
Cathode
BAV70W
1 = A1 2 = A2 3 = C1/C2
Type
Code
PH
Common
Anode
BAW56W
1 = C1 2 = C2 3 = A1/A2
Type
Code
YX
Series
Connection
BAV99W
1 = A1 2 = C2 3 = C1/A2
Type
Code
A7
Maximum ratings 2)
Grenzwerte 2)
Power dissipation (per device) − Verlustleistung (pro Bauteil)
Ptot
200 mW 3)
Maximum average forward current
Dauergrenzstrom
single diode loaded – eine Diode belastet
both diodes loaded – beide Dioden belastet
IFAV
150 mA 3)
100 mA 3)
Repetitive peak forward current – Periodischer Spitzenstrom
IFRM
300 mA 3)
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
tp ≤ 1 s
tp ≤ 1 ms
tp ≤ 1 µs
IFSM
0.5 A
1 A
2 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
BAS16, BAW56, BAV99
BAV70
VRRM
85 V
100 V
Reverse voltage – Sperrspannung
DC
VR
75 V
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben
3
Mounted on 3 mm2 copper pads per terminal – Montage auf 3 mm2 Kupferbelag (Lötpads) je Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
2
1
3
2
3
1
2
1
3
2
1
3
1.3
0.3
1±0.1
2±0.1
Type
Code
3
2
1


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