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2DA1971Q датащи(PDF) 2 Page - Diodes Incorporated

номер детали 2DA1971Q
подробное описание детали  PNP HIGH VOLTAGE SWITCHING TRANSISTOR
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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2DA1971Q датащи(HTML) 2 Page - Diodes Incorporated

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2DA1971Q
Document number: DS39501 Rev. 2 - 2
2 of 7
www.diodes.com
February 2018
© Diodes Incorporated
2DA1971Q
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
IC
-0.5
A
Peak Pulse Current
ICM
-1
A
Base Current
IB
-250
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
1.5
W
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
83
°C/W
Thermal Resistance, Junction to Leads (Note 7)
RθJL
10.4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
8,000
V
3B
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
6. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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