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AM29PDL128G датащи(PDF) 66 Page - SPANSION |
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AM29PDL128G датащи(HTML) 66 Page - SPANSION |
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66 / 69 page ![]() July 29, 2002 Am29PDL128G 65 P R E L I M I NARY ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 3.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90 °C, V CC = 2.7 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables 14–17 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Note: Includes all pins except V CC. Test conditions: VCC = 3.0 V, one pin at a time. FORTIFIED BGA PACKAGE CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions T A = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.2 10 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 100 sec Double Word Program Time 16.6 330 µs Excludes system level overhead (Note 5) Word Program Time 12.6 210 µs Accelerated Double Word Program Time 14.5 120 µs Accelerated Word Program Time 10.5 240 µs Chip Program Time (Note 3) Double Word Mode 69.6 208 sec Word Mode 105.7 317 Description Min Max Input voltage with respect to V SS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 13 V Input voltage with respect to V SS on all I/O pins –1.0 V V CC + 1.0 V V CC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit C IN Input Capacitance V IN = 0 TBD TBD pF C OUT Output Capacitance V OUT = 0 TBD TBD pF C IN2 Control Pin Capacitance V IN = 0 TBD TBD pF Parameter Description Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C10 Years 125 °C20 Years |
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