IXTP01N100 datasheet(1/2 Pages) IXYS

номер детали	IXTP01N100

подробное описание детали	High Voltage MOSFET

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производитель	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

1000

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C;T

J = 25°C to 150°C

100

mA

I

DM

T

C

= 25

°C, pulse width limited by T

J

400

mA

P

D

T

C

= 25

°C25

W

T

A

= 25

°C

1.1

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

Weight

1

g

High Voltage MOSFET

D (TAB)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS

= -10 V, I

D = 25 µA

1000

V

GS(off)

V

DS

= 25V, I

D = 25 µA

-2.5

-5

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS(off)

V

DS

= V

DSS, VGS = -10 V

T

J = 25°C10

µA

T

J = 125°C

250

µA

R

DS(on)

V

GS

=

0 V, I

D = 50 mA Note 1

90

110

Ω

I

D(on)

V

GS

= 0 V, V

DS = 50V Note 1

250

mA

98809A (12/01)

G D

S

TO-220AB (IXTP)

N-Channel, Depletion Mode

IXTP 01N100D

V

DSS

= 1000

V

I

D25

= 100 mA

R

DS(on) =

110

Ω

Features

l Normally ON mode

l Low R

DS (on) HDMOS

TM process

l Ruggedpolysilicongatecellstructure

l Fast switching speed

Applications

l Levelshifting

l Triggers

l Solid state relays

l Currentregulators

Аналогичный номер детали - IXTP01N100

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXTP01N100D	93Kb / 2P	N-Channel, Depletion Mode High Voltage MOSFET
IXYS Corporation	IXTP01N100D	164Kb / 6P	Power MOSFET

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Аналогичное описание - IXTP01N100

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IXTP01N100 датащи(PDF) 1 Page - IXYS Corporation

IXTP01N100 датащи(HTML) 1 Page - IXYS Corporation

Аналогичный номер детали - IXTP01N100

Аналогичное описание - IXTP01N100

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