MCCD2004 datasheet(1/4 Pages) MCC

номер детали	MCCD2004

подробное описание детали	Dual N-Channel Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

производитель	MCC [Micro Commercial Components]

домашняя страница	http://www.mccsemi.com

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1 / 4 page

MC

CD2004

Dual N-Channel

Power MOSFET

Features

MaximumRatings@25OCUnlessOtherwiseSpecified

Symbol

Parameter

Rating

Unit

VDS

Drain-source Voltage

20

V

ID

Drain Current-Continuous

10

A

IDM

Pulsed Drain Current

(note1)

40

A

VGS

Gate-source Voltage

f

12

V

R

©

JA

Thermal Resistance Junction to Ambient

125

/W

TJ

Operating Junction Temperature

-55 to +150

TSTG

Storage Temperature

-55 to +150

Revision:

A

20

16/02/03

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

DFN2030-6

•

Advanced trench MOSFET process technology

•

Halogen free available upon request by adding suffix "-HF"

•

Epoxy meets UL 94 V-0 flammability rating

A

0.700

0.800

0.028

.032

B

0.203REF.

0.008REF.

C

0.000

0.050

0000

0.002

D

1.950

2.050

0.077

0.081

E

2.950

3.050

0.116

0.120

F

1.400

1.600

0.055

0.063

G

1.600

1.800

0.063

0.071

H

0.200

0.300

0.008

0.012

J

0.200

---

0.008

---

K

0.300

0.400

0.018

0.026

L

0.500TYP.

0.020TYP.

Dimensions

Micro Commercial Components

M C C

R

omponents

20736 Marilla Street Chatsworth

!"#

$% !"#

www.mccsemi.com

1 of 4

Equivalent Circuit

E

Notes:

1.. Repetit

ive Rating: Pulse width limited by junction temperature.

B

C

D

A

F

H

G

J

L

K

•

Moisture Sensitivity Level 1

•

M

arking:2004

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