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DMTH10H015LK3 датащи(PDF) 4 Page - Diodes Incorporated

номер детали DMTH10H015LK3
подробное описание детали  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH10H015LK3 датащи(HTML) 4 Page - Diodes Incorporated

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DMTH10H015LK3
Document number: DS38735 Rev. 5 - 2
4 of 7
www.diodes.com
June 2017
© Diodes Incorporated
DMTH10H015LK3
0
0.005
0.01
0.015
0.02
0.025
0.03
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS = 6V, ID = 20A
V
GS = 10V, ID = 20A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 1mA
I
D = 250µA
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
V
GS = 0V
T
J = 175
oC
1
10
100
1000
10000
0
10
20
30
40
50
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
5
10
15
20
25
30
35
Q
g (nC)
Figure 11. Gate Charge
V
DS = 50V, ID = 10A
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max) = 150℃
T
C = 25℃
Single Pulse
DUT on Infinite
Heatsink
V
GS = 10V
R
DS(ON)
Limited
P
W = 1s
P
W = 100ms
P
W = 10ms
P
W = 1ms
P
W = 100µs
P
W = 10µs
P
W = 1µs



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