PowerDI is a registered trademark of Diodes Incorporated.

DMT4002LPS

Document number: DS38972 Rev. 2 - 2

2 of 7

www.diodes.com

August 2016

© Diodes Incorporated

DMT4002LPS

Characteristic

Symbol

Value

Units

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

V

100

100

A

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

200

A

Continuous Body Diode Forward Current (Note 6)

85

A

Avalanche Current, L = 0.1mH

48

A

Avalanche Energy, L = 0.1mH

115

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

2.3

W

Thermal Resistance, Junction to Ambient (Note 5)

55

°C/W

Total Power Dissipation (Note 6)

104

W

Thermal Resistance, Junction to Case (Note 6)

1.2

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

40

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1

—

3

V

Static Drain-Source On-Resistance

—

1.3

1.8

m

Ω

—

2

3.1

Diode Forward Voltage

—

—

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

6771

—

pF

f = 1MHz

Output Capacitance

—

2165

—

Reverse Transfer Capacitance

—

176

—

Gate Resistance

—

0.85

—

Ω

—

116.1

—

nC



—

55.2

—

Gate-Source Charge

—

20.3

—

Gate-Drain Charge

—

22.7

—

Turn-On Delay Time

—

11.4

—

ns

Turn-On Rise Time

—

22.9

—

Turn-Off Delay Time

—

62.5

—

Turn-Off Fall Time

—

28

—

Reverse Recovery Time

—

58.6

—

ns

Reverse Recovery Charge

—

107

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

9. Package limited.