Philips Semiconductors

PMF280UN

N-channel

µTrenchMOS™ ultra low level FET

Product data

Rev. 01 — 27 February 2004

2 of 12

9397 750 12768

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

3.

Ordering information

4.

Limiting values

Table 2:

Ordering information

Type number

Package

Name

Description

Version

PMF280UN

SC-70

Plastic surface mounted package; 3 leads

SOT323

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

25

°C ≤ T

-

20

V

drain-gate voltage (DC)

25

°C ≤ T

-20

V

gate-source voltage (DC)

-

±8V

drain current (DC)

-

1.02

A

-

0.64

A

peak drain current

-

2.04

A

total power dissipation

-

0.56

W

storage temperature

−55

+150

°C

junction temperature

−55

+150

°C

Source-drain diode

source (diode forward) current (DC)

-

0.47

A

-

0.94

A