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2N3019S датащи(PDF) 2 Page - Microsemi Corporation

номер детали 2N3019S
подробное описание детали  LOW POWER NPN SILICON TRANSISTOR
PDF  2 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3019S датащи(HTML) 2 Page - Microsemi Corporation

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2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCE = 90 Vdc
ICES
10
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
IEBO
10
ηAdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
IC = 1.0 Adc, VCE = 10 Vdc
hFE
100
50
90
50
15
300
200
200
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
VCE(sat)
0.2
0.5
Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
VBE(sat)
1.1
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
hfe
80
400
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
h
fe
5.0
20
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
12
p
ƒ
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
60
pF
SAFE OPERATING AREA
DC Tests
TC = 25
0C, 1 Cycle, t = 10 ms
Test 1
VCE = 10 Vdc
2N3019, 2N3019S
IC = 500 mAdc
2N3057A, 2N3700, 2N3700UB
IC = 180 mAdc
Test 2
VCE = 40 Vdc
2N3019, 2N3019S
IC = 125 mAdc
2N3057A, 2N3700, 2N3700UB
IC = 45 mAdc
Test 3
VCE = 80 Vdc
2N3019, 2N3019S
IC = 60 mAdc
2N3057A, 2N3700, 2N3700UB
IC = 22.5 mAdc
(1) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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