IXGH32N60BU1 datasheet(1/6 Pages) IXYS

номер детали	IXGH32N60BU1

подробное описание детали	HiPerFAST IGBT with Diode

PDF	6 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 6 page

DS95567C(02/03)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

BV

CES

I

C

= 750

µA, V

GE = 0 V

600

V

GE(th)

I

C

= 250

µA, V

CE = VGE

2.5

5.0

V

I

CES

V

CE = 0.8 • VCES

T

J = 25°C

500

µA

V

GE = 0 V

T

J = 125°C8

mA

I

GES

V

CE = 0 V, VGE = ±20 V

±100

nA

V

CE(sat)

I

C

= I

C90, VGE = 15 V

2.3

V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

600

V

CGR

T

J

= 25

°C to 150°C; R

GE = 1 MΩ

600

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C60

A

I

C90

T

C = 90°C32

A

I

CM

T

C = 25°C, 1 ms

120

A

SSOA

V

GE = 15 V, TVJ = 125°C, RG = 33 Ω

I

CM = 64

A

(RBSOA)

Clamped inductive load, L = 100

µH

@ 0.8 V

CES

P

C

T

C = 25°C

200

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

Maximum Lead and Tab temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

M

d

Mounting torque, TO-247 AD

1.13/10

Nm/lb.in.

Weight

6g

HiPerFASTTM IGBT

with Diode

Features

International standard packages

JEDEC TO-247 SMD

High frequency IGBT and antiparallel

FRED in one package

High current handling capability

Newest generation HDMOSTM process

MOS Gate turn-on

- drive simplicity

Applications

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

Advantages

Space savings (two devices in one

package)

High power density

Very fast switching speeds for high

frequency applications

IXGH 32N60BU1

V

CES

= 600 V

I

C25

=

60 A

V

CE(sat)

= 2.3 V

t

fi

=

80 ns

C (TAB)

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

G

C

E

TO-247 AD

Аналогичный номер детали - IXGH32N60BU1

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXGH32N60B	35Kb / 2P	HiPerFAST IGBT
Inchange Semiconductor ...	IXGH32N60B	327Kb / 2P	IGBT
IXYS Corporation	IXGH32N60BD1	69Kb / 2P	HiPerFAST IGBTwith Diode
	IXGH32N60BD1	132Kb / 5P	HiPerFAST IGBT
	IXGH32N60B	132Kb / 5P	HiPerFAST IGBT

More results

Аналогичное описание - IXGH32N60BU1

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXGH30N60BU1	141Kb / 5P	HiPerFAST IGBT with Diode
	IXGH24N60BU1	135Kb / 6P	HiPerFAST IGBT with Diode
	IXGX50N60AU1	190Kb / 6P	HiPerFAST IGBT with Diode
	IXGK60N60B2D1	622Kb / 6P	HiPerFAST IGBT with Diode
	IXGK50N60C2D1	628Kb / 6P	HiPerFAST IGBT with Diode
	IXGA7N60BD1	84Kb / 2P	HiPerFAST IGBT with Diode
	IXGH32N60CD1	168Kb / 5P	HiPerFAST IGBT with Diode
	IXGK50N60B2D1	633Kb / 6P	HiPerFAST IGBT with Diode
	IXG7N60BD1	84Kb / 2P	HiPerFAST IGBT with Diode
	IXGR24N60CD1	42Kb / 2P	HiPerFAST IGBT with Diode

More results

IXGH32N60BU1 датащи(PDF) 1 Page - IXYS Corporation

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Аналогичный номер детали - IXGH32N60BU1

Аналогичное описание - IXGH32N60BU1

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