IRHM7360, IRHM8360 Devices

2

www.irf.com

nA

…

µA

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

0.5

RthCS

Case-to-Sink

—

0.21

—

°C/W

RthJA

Junction-to-Ambient

—

—

48

Typical socket mount

Pre-Irradiation



Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

400

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.45

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.22

VGS = 12V, ID = 14A

Resistance

—

—

0.25

VGS = 12V, ID = 22A

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

6.0

—

—

S ( )VDS > 15V, IDS = 14A …

IDSS

Zero Gate Voltage Drain Current

—

—

50

VDS= 0.8 x Max Rating,VGS=0V

—

—

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

210

VGS = 12V, ID =22A

Qgs

Gate-to-Source Charge

—

—

45

nC

VDS = Max Rating x 0.5

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

120

Turn-On Delay Time

—

—

33

VDD = 200V, ID = 22A,

tr

Rise Time

—

—

59

RG = 2.35Ω

Turn-Off Delay Time

—

—

140

tf

Fall Time

—

—

75

LD

Internal Drain Inductance

—

8.7

—

LS

Internal Source Inductance

—

8.7

—

Ciss

Input Capacitance

—

5600

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

990

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

380

—

nH

ns

Measured from drain

lead, 6mm (0.25 in)

from package to center

of die.

Measured from source

lead, 6mm (0.25 in)

from package to

source bonding pad.

Modified MOSFET sym-

bol showing the internal

inductances.

Source-Drain Diode Ratings and Characteristics



Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

22

ISM

Pulse Source Current (Body Diode)

‚

——

88

VSD

Diode Forward Voltage

—

—

1.8

V

trr

Reverse Recovery Time

—

—

1000

ns

Tj = 25°C, IF =22A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

11

µCVDD ≤ 50V …

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Modified MOSFET symbol

showing the integral reverse

p-n junction rectifier.

Ω