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BCW66F датащи(PDF) 2 Page - Micro Commercial Components |
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BCW66F датащи(HTML) 2 Page - Micro Commercial Components |
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2 / 3 page ![]() MCC BCW66F Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Min. TYP. Max. Unit DC Current Gain(1) at VCE = 10V, IC = 100 µA hFE 35 ––– at VCE = 1V, IC = 10mA hFE 75 ––– at VCE = 1V, IC = 100mA hFE 100 250 – at VCE = 2V, IC = 500mA hFE Collector-Emitter Saturation Voltage at IC = 100mA, IB = 10mA VCEsat – – 0.3 V at IC = 500mA, IB = 50mA VCEsat – – 0.7 V Base-Emitter Saturation Voltage at IC = 500mA, IB = 50mA VBEsat – – 2 V Collector-Emitter Breakdown Voltage at IC = 10mA, IB = 0 V(BR)CEO 45 – – V Collector-Base Breakdown Voltage at IC = 10 µA, IB = 0 V(BR)CBO 75 – – V Emitter-Base Breakdown Voltage at IE = 10 µA, IC = 0 V(BR)EBO 5–– V Collector-Base Cut-off Current at VCB = 45V, IE = 0 ICBO – – 20 nA Emitter-Base Cut-off Current at VEB = 4V, IC = 0 IEBO – – 20 nA Gain-Bandwidth Product at VCE = 10V, IC = 20mA, f = 100MHz fT 100 – – MHZ Output Capacitance at VCB = 10V, IE=0,f = 1MHz Cob – – 12 pF Input Capacitance at VEB = 0.5V,IE=0, f = 1MHz Cib – – 80 p F 35 Revision: A 2015/03/03 TM Micro Commercial Components www.mccsemi.com 2 of 3 |
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