IRL81A datasheet(2/9 Pages) OSRAM

номер детали	IRL81A

подробное описание детали	High Power Infrared Emitter

PDF	9 Pages

Scroll/Zoom	100%

производитель	OSRAM [OSRAM GmbH]

домашняя страница	http://www.osram.com

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2 / 9 page

2016-10-12

Version 1.5

IRL 81 A

Maximum Ratings (TA = 25 °C)

Characteristics (T

A = 25 °C)

Parameter

Symbol

Values

Unit

Operation and storage temperature range

op; Tstg

-40 ... 100

°C

Reverse voltage

Forward current

100

Surge current

p = 200 µs, D = 0)

FSM

Power consumption

Ptot

180

Thermal resistance junction - ambient

(ambient mounted on PC-board (FR4), padsize 16

mm² each)

RthJA

375

K / W

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

ESD

Parameter

Symbol

Values

Unit

Peak wavelength

(IF = 100 mA, tp = 20 ms)

(typ)

peak

860

Centroid wavelength

(IF = 100 mA, tp = 20 ms)

(typ)

λcentroid

850

Spectral bandwidth at 50% of Imax

F = 100 mA, tp = 20 ms)

(typ)

∆λ

Half angle

(typ)

± 12

Dimensions of active chip area

(typ)

L x W

0.3 x 0.3

mm x

Rise and fall time of Ie ( 10% and 90% of Ie max)

(IF = 100 mA, RL = 50 Ω, 10% ... 90%)

(typ)

tr, tf

Forward voltage

(IF = 20 mA, tp = 20 ms)

(typ (max)) VF

1.3 (≤ 1.6)

Forward voltage

F = 1 A, tp = 100 µs)

(typ (max)) V

2.4 (≤ 3)

Reverse current

R = 5 V)

not designed for

reverse operation

µA

Total radiant flux

(IF=20 mA, tp=20 ms)

(typ)

Φe

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