DMP6050SPS datasheet(2/7 Pages) DIODES

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DMP6050SPS

Document number: DS40042 Rev. 3 - 2

2 of 7

www.diodes.com

January 2018

DMP6050SPS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-60

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

-5.7

-4.5

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

-45

Maximum Continuous Body Diode Forward Current (Note 6)

-2.4

Pulsed Body Diode Forward Current (10

μs Pulse, Duty Cycle = 1%)

ISM

-45

Avalanche Current (Note 8) L = 0.1mH

IAS

-25

Repetitive Avalanche Energy (Note 8) L = 0.1mH

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

1.3

Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5)

RθJA

°C/W

Power Dissipation (Note 6)

2.4

Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6)

RθJA

°C/W

Thermal Resistance, Junction to Case @ TC = +25°C (Note 7)

RθJC

2.4

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

-60

—

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current

IDSS

—

-1

µA

VDS = -60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

-1.0

—

-3.0

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS(ON)

—

VGS = -10V, ID = -5A

—

VGS = -4.5V, ID = -4A

Diode Forward Voltage

VSD

—

-0.7

-1.2

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss

—

2163

—

VDS = -30V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

Gate Resistance

—

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -10V)

—

VDS = -30V, ID = -5A

Total Gate Charge (VGS = -4.5V)

—

Gate-Source Charge

Qgs

—

Gate-Drain Charge

Qgd

—

4.6

—

Turn-On Delay Time

tD(ON)

—

4.7

—

VGS = -10V, VDS = -30V,

RG = 3Ω, ID = -5A

Turn-On Rise Time

—

2.7

—

Turn-Off Delay Time

tD(OFF)

—

Turn-Off Fall Time

—

Body Diode Reverse Recovery Time

tRR

—

IF = -5A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—

IF = -5A, di/dt = 100A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

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