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AP3P010AMT датащи(PDF) 3 Page - Advanced Power Electronics Corp.

номер детали AP3P010AMT
подробное описание детали  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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производитель  A-POWER [Advanced Power Electronics Corp.]
домашняя страница  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP3P010AMT датащи(HTML) 3 Page - Advanced Power Electronics Corp.

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AP3P010AMT
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+09
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
40
80
120
160
200
02
46
8
10
-V DS , Drain-to-Source Voltage (V)
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
T C =25
o C
0
20
40
60
80
100
120
02468
10
-V DS , Drain-to-Source Voltage (V)
T C = 150
o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
6
7
8
9
10
11
12
2468
10
-V GS , Gate-to-Source Voltage (V)
I D = -12 A
T C =25
o C
0.0
0.4
0.8
1.2
1.6
2.0
-100
-50
0
50
100
150
T j , Junction Temperature (
o C)
I D = -20A
V G = -10V
0.0
0.4
0.8
1.2
1.6
2.0
-100
-50
0
50
100
150
T j , Junction Temperature (
o C)
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
T j =25
o C
T j =150
o C
I D = -250uA
.



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