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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HT85F2250 датащи(PDF) 39 Page - Holtek Semiconductor Inc |
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HT85F2250 датащи(HTML) 39 Page - Holtek Semiconductor Inc |
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39 / 187 page  Rev. 1.10 �9 of 187 ���� �1� �01� A/D Flash 8051 Core Low Pin Count MCU HT85F2250/HT85F2262 Page Erase Operation The Flash Memory must be first unlocked before implementing a page erase procedure. The flash memory address is setup using the control registers, FMAR0, FMAR1 and FMAR2. The Flash Memory Page Erase function is selected by the control bit, FMCR.2, in the FMCR register. Setting the FMCR.7 bit high will start the Page Erase procedure. When the procedure has finished, the MCU will continue to run automatically. The following flowchart illustrates the Page Erase procedure. START END Write FMAR� Write FMAR1 Write FMAR0 MCU waits for page-erasing finished. Then MCU contin�es to r�n. F�ash memor� contro��er m�st be In �n�ocked state FMCR Bit � = 1 This wi�� trigger page-erasing action FMCR Bit 7 = 1 Check FMSR Bit 1 = 1 Yes No Page Erase Flowchart |
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