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MSC1015M датащи(PDF) 1 Page - Advanced Semiconductor |
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MSC1015M датащи(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 65 V BVCER IC = 10 mA RBE = 10 Ω 65 V BVEBO IE = 1.0 mA 3.5 V ICES VCB = 50 V 2.5 mA hFE VCE = 5.0 V IC = 500 mA 15 120 --- PG ηηηη C VCC = 50 V POUT = 15 W f = 1025 – 1150 MHz PIN = 1.5 W 10 35 dB % Pulse width = 10 µSec, Duty Cycle = 1 % NPN SILICON RF POWER TRANSISTOR MSC1015M DESCRIPTION: The ASI MSC1015M is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Class C Operation • P G = 10 dB at 15 W/1150 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 1.25 A PEAK VCB 50 V PDISS 88 W PEAK TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθ JC 2.0 °C/W PACKAGE STYLE .280 2L FLG 1 = Collector 2 = Emitter 3 = Base 1 2 3 |
Аналогичный номер детали - MSC1015M |
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Аналогичное описание - MSC1015M |
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