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M610261FST датащи(PDF) 1 Page - MTRONPTI |
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M610261FST датащи(HTML) 1 Page - MTRONPTI |
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1 / 2 page ![]() 1 of 2 MtronPTI - 2525 Shader Road - Orlando - Florida - 32804 - USA - 1-407-298-2000 - www.mtronpti.com MtronPTI reserves the right to make changes to the product(s) and services(s) described herein without notice. No liability is assumed as a result of their use or application. M610x-SYNCE Series TCXO IEEE 1588 & Synchronous Ethernet Features: Available in Clipped Sine Wave or CMOS output Available in 10 pad or 4/5 pad options Low phase noise and excellent g-sensitivity performance 1.5 ppb/g Applications: Synchronous Ethernet slave clocks ITU-T G.8262 EEC options 1 & 2 Compliant to Stratum 3 GR-1244-CORE & GR-253-CORE SONET/SDH Network Timing Wireless Communications Designed to Support 1588 & SyncE Device Suppliers Like: Microsemi IDT Semtech Electrical Specifications: Parameter Symbol Min. Typ. Max. Units Conditions Frequency Range F 10.000 38.880 MHz Initial Accuracy FI -1.0 +1.0 ppm @ 25˚C @ time of shipment Frequency Stabilities Operating Temperature TA See Ordering Information vs Temperature ΔF T/F 0.3 ppm TA = -40 °C to +85 °C Ref GR1244CORE vs Drift 40 ppb After 24 hours at constant temperature Free-Run Accuracy -4.6 +4.6 ppm Includes initial calibration @ +25 °C, deviation over temperature, supply voltage and load variations, reflow soldering, and 20 year aging. vs. Supply Voltage ΔF VDD/F ±0.02 ±0.1 ppm ±5% change in voltage vs. Load ΔF LOAD/F ±0.02 ±0.1 ppm ±5% change in load RF Output Output Type See Ordering Information Output Load 15 10/10 pF kΩ / pF HCMOS Output Clipped Sine Wave Output Symmetry (duty cycle) TDC 40 50 60 % Ref to ½ VS, HCMOS Rise/Fall Time TR/TF 8 ns Ref. 10% to 90% VOUT, HCMOS Output Logic Level (HCMOS) VOH 80 % VDD IOH/ IOL = ±4 mA, VS = +3.0 V VOH 20 % VDD IOH/ IOL = ±4 mA, VS = +3.0 V Output Level (Clipped Sinewave) 1.0 Vpk-pk Frequency Adjustment ±9.2 ppm Over Control Voltage Range Control Voltage Range 0.3 0.3 0.5 2.7 3.0 4.5 V For VS = 3.0 V For VS = 3.3 V For VS = 5.0 V Input Resistance 100 kΩ Linearity 3 % Other Parameters SSB Phase Noise (under static conditions, 10MHz) -100 dBc/Hz @ 10 Hz Offset -128 @ 100 Hz Offset -148 @ 1 kHz Offset -155 @ 10 kHz Offset -156 @ 100 kHz Offset Wander Generation MTIE & TDEV per ITU-T G.8262 EEC option 2, GR-1244 & ITU-T G.812 (See Figure A) @ 0.1 Hz bandwidth Supply Voltage & Current Supply Voltage VDD See Ordering Information VDC Supply Current ID 2.2 3.3 mA HCMOS @ 13 MHz 1.5 2.2 mA Clipped Sine Wave @ 13 MHz Rev: 11/1/2012 |
Аналогичный номер детали - M610261FST |
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Аналогичное описание - M610261FST |
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