ACE5022AE datasheet(1/7 Pages) ACE

номер детали	ACE5022AE

подробное описание детали	Dual N-Channel Enhancement Mode MOSFET

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE5022AE

Dual N-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE5022AE is the Dual N-Channel enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology. This high density process is especially

tailored to minimize on-state resistance and provide superior switching performance. These devices are

particularly suited for low voltage applications such as notebook computer power management and other

battery powered circuits where high-side switching, low in-line power loss and resistance to transients are

needed.

Features



N-Channel

20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V

20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V

20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V



Super high density cell design for extremely low RDS (ON)



Exceptional on-resistance and maximum DC current capability



SOT-563 (SC-89-6L) package design

Application



Power Management in Note book



Portable Equipment



Battery Powered System



DC/DC Converter



Load Switch



DSC



LCD Display inverter

Absolute Maximum Ratings (TA=25℃ Unless otherwise noted)

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current (TJ=150℃)

TA=25℃

ID

0.65

A

TA=80℃

0.45

Pulsed Drain Current

IDM

1.0

A

Continuous Source Current (Diode Conduction)

IS

0.3

A

Power Dissipation

TA=25℃

PD

0.35

W

TA=70℃

0.19

Operating Junction Temperature

TJ

-55/150

OC

Storage Temperature Range

TSTG

-55/150

OC

Аналогичный номер детали - ACE5022AE

производитель	номер детали	датащи	подробное описание детали
ACE Technology Co., LTD...	ACE50222AM+	309Kb / 12P	400mA CMOS Low Dropout Voltage Low consumption Regulator VER 1.2
	ACE50222BM+	309Kb / 12P	400mA CMOS Low Dropout Voltage Low consumption Regulator VER 1.2
	ACE50222BNA+	309Kb / 12P	400mA CMOS Low Dropout Voltage Low consumption Regulator VER 1.2
	ACE50222BNB+	309Kb / 12P	400mA CMOS Low Dropout Voltage Low consumption Regulator VER 1.2
	ACE50223AM+	309Kb / 12P	400mA CMOS Low Dropout Voltage Low consumption Regulator VER 1.2

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Аналогичное описание - ACE5022AE

производитель	номер детали	датащи	подробное описание детали
Anpec Electronics Corop...	APM7312	118Kb / 9P	Dual N-Channel Enhancement Mode MOSFET
SYNC POWER Crop.	SPN1026	256Kb / 9P	Dual N-Channel Enhancement Mode MOSFET
SYNC POWER Crop.	SPN7002D	258Kb / 9P	Dual N-Channel Enhancement Mode MOSFET
Taiwan Semiconductor Co...	TSM4410D	164Kb / 5P	Dual N-Channel Enhancement Mode MOSFET
Cystech Electonics Corp...	MTDN8233X6	290Kb / 8P	Dual N -Channel Enhancement Mode MOSFET
Cystech Electonics Corp...	MTDN8810T8	423Kb / 8P	Dual N-Channel Enhancement Mode MOSFET
SYNC POWER Crop.	SPN1026	236Kb / 10P	Dual N-Channel Enhancement Mode MOSFET
SYNC POWER Crop.	SPN2622	188Kb / 8P	Dual N-Channel Enhancement Mode MOSFET
Diodes Incorporated	DMG1026UV	240Kb / 6P	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Rev 6
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ACE5022AE датащи(PDF) 1 Page - ACE Technology Co., LTD.

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Аналогичный номер детали - ACE5022AE

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