ACE2422A datasheet(1/8 Pages) ACE

номер детали	ACE2422A

подробное описание детали	N-Channel Enhancement Mode MOSFET

PDF	8 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE2422A

N-Channel Enhancement Mode MOSFET

VER 1.2

1

Description

The ACE2422A is the N-Channel logic enhancement mode power field effect transistors are

produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and other battery powered circuits, and low in-line power loss are needed

in a very small outline surface mount package.

Features



60V/3.0A,RDS(ON)= 106

mΩ@V

GS=10V



60V/2.5A,RDS(ON)= 118

mΩ@V

GS=4.5V



Super high density cell design for extremely low RDS (ON)



Exceptional on-resistance and maximum DC current capability



SOT-23-3 package design

Applications



Power Management in Note book



Portable Equipment



Battery Powered System



DC/DC Converter



Load Switch



DSC



LCD Display inverter

Absolute Maximum Ratings (TA=25℃ Unless otherwise noted)

Parameter

Symbol

Limit

Units

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current(TJ=150℃)

TA=25℃

ID

3.0

A

TA=70℃

2.2

Pulse Drain Current

IDM

10

A

Continuous Source Current (Diode Conduction)

IS

2.0

A

Power Dissipation

TA=25℃

PD

2.0

W

TA=70℃

1.3

Operating Temperature / Storage Temperature

TJ/TSTG

-55/150

OC

Thermal Resistance-Junction to Ambient

RθJA

140

℃/W

Аналогичный номер детали - ACE2422A

производитель	номер детали	датащи	подробное описание детали
ACE Technology Co., LTD...	ACE2420B	1Mb / 6P	N-Channel Enhancement Mode Power MOSFET VER 1.1

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ACE2422A датащи(PDF) 1 Page - ACE Technology Co., LTD.

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Аналогичный номер детали - ACE2422A

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