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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SPD07N20G датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SPD07N20G датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor SPD07N20G,ISPD07N20G · FEATURES · Static drain-source on-resistance: RDS(on)≤0.4Ω · Enhancement mode: · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Ideal for high-frequency switching and synchronous rectification · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pulsed 28 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 3.1 ℃ /W Rth(j-a) Channel-to-ambient thermal resistance 100 ℃ /W |
Аналогичный номер детали - SPD07N20G |
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Аналогичное описание - SPD07N20G |
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