Composite Transistors

1

Publication date: December 2003

SJJ00255BED

UP03383

Silicon NPN epitaxial planar type (Tr1)

Silicon PNP epitaxial planar type (Tr2)

For digital circuits

■ Features

• Two elements incorporated into one package

(Transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

■ Basic Part Number

• UNR2213 + UNR211F

■ Absolute Maximum Ratings T

Marking Symbol: DV

Internal Connection

1

5

Tr2

Tr1

3

4

2

Parameter

Symbol

Rating

Unit

Tr1

Collector-base voltage

50

V

(Emitter open)

Collector-emitter voltage

50

V

(Base open)

Collector current

100

mA

Tr2

Collector-base voltage

−50

V

(Emitter open)

Collector-emitter voltage

−50

V

(Base open)

Collector current

−100

mA

Overall

Total power dissipation

125

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Unit: mm

–0.02

+0.05

0.20

(0.30)

(0.50)

123

54

(0.50)

Display at No.1 lead

5˚

1: Emitter (Tr1)

4: Collector (Tr2)

2: Base (Tr1)

5: Collector (Tr1)

3: Emitter (Tr2)

Base (Tr2)

SSMini5-F2 Package