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SLG59H1007V датащи(PDF) 3 Page - Dialog Semiconductor |
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SLG59H1007V датащи(HTML) 3 Page - Dialog Semiconductor |
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3 / 20 page ![]() 000-0059H1007-100 Page 3 of 20 SLG59H1007V Absolute Maximum Ratings Parameter Description Conditions Min. Typ. Max. Unit VIN to GND Power Switch Input Voltage to GND Continuous -0.3 -- 30 V Maximum pulsed VIN, pulse width <0.1s -- -- 32 V VOUT to GND Power Switch Output Voltage to GND -0.3 -- VIN V ON, SEL[1,0], CAP, RSET, POUT, and FAULT to GND ON, SEL[1,0], CAP, RSET, POUT, and FAULT Pin Voltages to GND -0.3 -- 7 V TS Storage Temperature -65 -- 150 °C ESDHBM ESD Protection Human Body Model 2000 -- -- V ESDCDM ESD Protection Charged Device Model 500 -- -- V MSL Moisture Sensitivity Level 1 θJA Thermal Resistance 1.6 x 3.0 mm 18L STQFN; De- termined with the device mount- ed onto a 1 in2, 1 oz. copper pad of FR-4 material -- 40 -- °C/W MOSFET IDSCONT Continuous Current from VIN to VOUT TJ < 150°C -- -- 5 A MOSFET IDSPEAK Peak Current from VIN to VOUT Maximum pulsed switch current, pulse width < 1 ms, 1% duty cy- cle -- -- 6 A Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Electrical Characteristics 4.5 V ≤ VIN ≤ 22 V; CIN = 47 μF, TA = -40°C to 85°C, unless otherwise noted. Typical values are at TA = 25°C Parameter Description Conditions Min. Typ. Max. Unit VIN Operating Input Voltage 4.5 -- 22 V VIN(OVLO) VIN Overvoltage Lockout Threshold VIN ↑; SEL[1,0] = [0,0] 5.6 6 6.3 V VIN ↑; SEL[1,0] = [0,1] 10.2 10.8 11.4 V VIN ↑; SEL[1,0] = [1,0] 13.5 14.4 15.2 V VIN ↑; SEL[1,0] = [1,1] 22.6 24 25.2 V VIN(UVLO) VIN Undervoltage Lockout Threshold VIN ↓ 2.4 -- 3.8 V IQ Quiescent Supply Current ON = HIGH; IDS = 0 A -- 0.5 0.6 mA ISHDN OFF Mode Supply Current ON = LOW; IDS = 0 A -- 1 3 µA RDSON Static Drain to Source ON Resistance TA = 25°C; IDS = 0.1 A -- 13.3 14 mΩ TA = 85°C; IDS = 0.1 A -- 17.7 18 mΩ ILIMIT Active Current Limit, IACL VOUT > 0.5 V; RSET = 30.1 kΩ 2.8 3.2 3.6 A Short-circuit Current Limit, ISCL VOUT < 0.5 V -- 0.5 -- A TACL Active Current Limit Response Time RSET = 51.6 kΩ -- 120 -- µs |
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