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DMP2002UPS-13 датащи(PDF) 5 Page - Diodes Incorporated

номер детали DMP2002UPS-13
подробное описание детали  20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
PDF  8 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP2002UPS-13 датащи(HTML) 5 Page - Diodes Incorporated

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PowerDI is a registered trademark of Diodes Incorporated.
DMP2002UPS
Document number: DS37192 Rev. 5 - 2
5 of 8
www.diodes.com
July 2016
© Diodes Incorporated
DMP2002UPS
0.001
0.0014
0.0018
0.0022
0.0026
0.003
0.0034
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = -10V, ID = -25A
V
GS = -4.5V, ID = -20A
V
GS = -2.5V, ID = -15A
0
0.2
0.4
0.6
0.8
1
-50
-25
0
25
50
75
100
125
150
T
A, AMBIENT TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Ambient
Temperature
I
D = -1mA
I
D = -250µA
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
A = 85
oC
T
A = -55
oC
T
A = 25
oC
T
A = 125
oC
T
A = 150
oC
V
GS = 0V
1000
10000
100000
0
4
8
12
16
20
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
50 100 150 200 250 300 350 400 450 500
Q
g (nC)
Figure 11. Gate Charge
V
DS = -10V, ID = -20A
1
10
100
1000
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max) = 150℃
T
C = 25℃
V
GS = -10V
Single Pulse
DUT on Infinite Heatsink
R
DS(ON)
Limited
P
W = 1s
P
W = 100ms
P
W = 10ms
P
W = 1ms
P
W = 100µs
P
W = 10µs
P
W = 1µs



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