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DMP2002UPS датащи(PDF) 4 Page - Diodes Incorporated

номер детали DMP2002UPS
подробное описание детали  20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
PDF  8 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP2002UPS датащи(HTML) 4 Page - Diodes Incorporated

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PowerDI is a registered trademark of Diodes Incorporated.
DMP2002UPS
Document number: DS37192 Rev. 5 - 2
4 of 8
www.diodes.com
July 2016
© Diodes Incorporated
DMP2002UPS
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
0.5
1
1.5
2
2.5
3
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = -1.2V
V
GS = -1.3V
V
GS = -1.4V
V
GS = -2.0V
V
GS = -1.5V
V
GS = -4.5V
0
5
10
15
20
25
30
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = -5V
-55oC
25oC
85oC
125oC
150oC
0.0014
0.0016
0.0018
0.002
0.0022
0.0024
2
6
10
14
18
22
26
30
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
V
GS = -2.5V
V
GS = -4.5V
V
GS = -10V
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.01
0
2
4
6
8
10
12
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = -25A
I
D = -15A
I
D = -20A
0.001
0.0012
0.0014
0.0016
0.0018
0.002
0.0022
0.0024
0
5
10
15
20
25
30
I
D, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
V
GS = -4.5V
125oC
150oC
85oC
25oC
-55oC
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with
Temperature
V
GS = -4.5V, ID = -20A
V
GS = -2.5V, ID = -15A
V
GS = -10V, ID = -25A



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