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SSM3K03FE датащи(PDF) 2 Page - Toshiba Semiconductor |
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SSM3K03FE датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() SSM3K03FE 2003-03-27 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 10 V, VDS = 0 ¾ ¾ 1 mA Drain-source breakdown voltage V (BR) DSS ID = 100 mA, VGS = 0 20 ¾ ¾ V Drain cut-off current IDSS VDS = 20 V, VGS = 0 ¾ ¾ 1 mA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.7 ¾ 1.3 V Forward transfer admittance ïYfsï VDS = 3 V, ID = 10 mA 25 50 ¾ mS Drain-source ON resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ¾ 4 12 W Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 11.0 ¾ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 3.3 ¾ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 9.3 ¾ pF Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ¾ 0.16 ¾ Switching time Turn-off time toff VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ¾ 0.19 ¾ ms Switching Time Test Circuit (a) Test circuit (b) VIN VGS (c) VOUT VDS |
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