DocID030747 Rev 1

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STWBC-EP

Electrical characteristics

32

6.9.2

Memory characteristics

Flash program and memory/data EEPROM memory

Table 8. Flash program memory/data EEPROM memory

Symbol

Parameter

Conditions

Unit

Standard programming time

-

-

6

6.6

ms

(including erase) for byte/word/block

-

-

-

-

(1 byte/4 bytes/128 bytes)

-

-

-

-

Fast programming time for 1 block (128 bytes)

-

-

3

3.3

-

-

3

3.3

ms

10 K

-

-

Cycle

s

Erase/write cycles(2) (data memory)

100 K

-

-

35 K

-

-

Data retention (program memory) after 10 K

15

-

-

Years

Data retention (program memory) after 10 K

11

-

-

Data retention (data memory) after 100 K

15

-

-

Data retention (data memory) after 35 K

6

-

-

Supply current during program and erase

cycles

-40 ºC

-

2

-

mA

1. Data based on characterization results, not tested in production.

2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation

addresses a single byte.