OP950 datasheet(4/5 Pages) TTELEC

4 / 5 page

General Note

TT Electronics reserves the right to make changes in product speciﬁcation without

notice or liability. All information is subject to TT Electronics’ own data and is

considered accurate at time of going to print.

PIN Silicon Photodiode

OP950 Series

Issue A

08/2016

Page 4

OPTEK Technology, Inc.

1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200

www.optekinc.com | www.ttelectronics.com

Absolute Maximum Ratings (TA = 25° C unless otherwise noted)

Reverse Breakdown Voltage

60 V

Storage & Opera ng Temperature Range

-40° C to +100° C

Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron]

260° C

(1)

Reverse Breakdown Voltage

60 V

Power Dissipa on

100 mW

(2)

Electrical Speciﬁcations

Electrical Characteristics (TA = 25° C unless otherwise noted)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Reverse Light Current

OP950, OP955

OP954

3.5

µA

VR = 5 V, EE = 1 mW/cm

2 (3)

Reverse Dark Current

VR = 30 V, EE = 0

(4)

V(BR)

Reverse Breakdown Voltage

IR = 100 μA

Forward Voltage

1.2

IF = 1 mA

Total Capacitance

VR = 20 V, EE = 0, f = 1.0 MHz

Rise Time

Fall Time

VR = 20 V, λ = 850 nm, RL = 50 Ω

Notes:

(1) RMA ﬂux is recommended. Dura on can be extended to 10 seconds maximum when ﬂow soldering. A maximum of 20

grams force may be applied to leads when soldering.

(2) Derate linearly 1.67 mW/° C above 25° C.

(3) The light source is an unﬁltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level

which varies less than 10% over the en re lens surface of the photodiode being tested.

(4) Calculate the typical dark current in nA using the formula ID = 10

(0.042T

-1.5) where T

A is ambient temperature in °C.

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