NTE2562 datasheet(2/2 Pages) NTE

номер детали	NTE2562

подробное описание детали	Silicon Complementary Transistors High Current Switch

PDF	2 Pages

Scroll/Zoom	100%

производитель	NTE [NTE Electronics]

домашняя страница	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector–Emitter Saturation Voltage

NTE2562

VCE(sat)

IC = 5A, IB = 0.25A

–

0.4

NTE2563

–

0.5

Collector–Base Breakdown Voltage

V(BR)CBO IC = 1mA, IE = 0

–

Collector–Emitter Breakdown Voltage

V(BR)CEO IC = 1mA, RBE = ∞

–

Emitter–Base Breakdown Voltage

V(BR)EBO IE = 1mA, IC = 0

–

Turn–On Time

NTE2562

ton

VCC = 10V, VBE = –5V,

–

0.2

–

µs

NTE2563

10IB1 = –10IB2 = IC = 5A,

Pulse Width = 20

µs,

–

0.1

–

µs

Storage Time

NTE2562

tstg

Pulse Width = 20

µs,

Duty Cycle = 1%

–

0.5

–

µs

NTE2563

–

0.3

–

µs

Fall Time

–

0.03

–

µs

.402 (10.2) Max

.224 (5.7) Max

.295

(7.5)

.165

(4.2)

.669

(17.0)

Max

.531

(13.5)

Min

.100 (2.54)

.059 (1.5) Max

.114 (2.9) Max

.173 (4.4) Max

.122 (3.1)

Dia

NOTE: Tab is isolated

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