FXT751 datasheet(1/1 Pages) ZETEX

номер детали	FXT751

подробное описание детали	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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производитель	ZETEX [Zetex Semiconductors]

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PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 1 FEB 94

FEATURES

* 60 Volt VCEO

* 2 Amp continuous current

*Ptot= 1 Watt

APPLICATIONS

* Lamp, relay or solenoid drivers

* Audio circuits

* Replacement of TO126 and TO220 parts

REFER TO ZTX751 FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-6

A

Continuous Collector Current

IC

-2

A

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-80

V

IC=-100µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-60

V

IC=-10mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO

-5

V

IE=-100µA, IC=0

Collector Cut-Off

Current

ICBO

-0.1

-10

µ

A

µ

A

VCB=-60V, IE=0

VCB=-60V, Tamb=100°C

Emitter Cut-Off Current

IEBO

-0.1

µ

A

VEB=-4V, IC=0

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.15

-0.28

-0.3

-0.5

V

IC=-1A, IB=-100mA*

IC=-2A, IB=-200mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-0.90

-1.25

V

IC=-1A, IB=-100mA*

Base-Emitter Turn-On

Voltage

VBE(on)

-0.8

-1.0

V

IC=-1A, VCE=-2V*

Static Forward Current

Transfer Ratio

hFE

70

100

80

40

200

170

150

300

IC=-50mA, VCE=-2V*

IC=-500mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-2A, VCE=-2V*

Transition

Frequency

fT

100

140

MHz

IC=-100mA, VCE=-5V

f=100MHz

Output Capacitance

Cobo

30

pF

VCB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

E-Line

TO92 Compatible

FXT751

3-57

B

C

E

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