M54561P datasheet(2/4 Pages) MITSUBISHI

2 / 4 page

Aug. 1999

—

1.65

1.45

–150

–1.6

—

8000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54561P

7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

—

1000

IS (leak)

hFE

—

VS–0.2

VIH

VIL

VS+0.3

VS–3

Parameter

Limits

Symbol

Unit

—

–300

–100

VCE (sat)

100

2.4

2.0

–250

–2.4

100

—

VS = 40V

VI = VS–3V, IO = –300mA

VI = VS–3V, IO = –100mA

VI = VS–3.5V,

IF = –300mA

VR = 40V

VCE = 4V, IO = –300mA, Ta =25°C

Symbol

Unit

Parameter

Test conditions

Limits

+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any

conditions.

µA

—

Supply voltage

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

Percent duty cycle less

than 10%

Percent duty cycle less

than 50%

Output current

per channel

“H” input voltage

“L” input voltage

min

typ

max

min

typ+

max

Supply leak current

Clamping diode forward voltage

Clamping diode reverse current

DC amplification factor

Collector-emitter saturation voltage

ton

toff

—

200

2500

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

Turn-on time

Turn-off time

CL = 15pF (note 1)

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Input current

µA

ton

50%

INPUT

OUTPUT

50%

toff

Ω

(1) Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10

µs, tr = 6ns, tf = 6ns, ZO = 50Ω

VIN = 7 to 10.3V

(2) Input-output conditions : RL = 40

Ω, VS = 10V

(3) Electrostatic capacity CL includes floating capacitance at

connections and input capacitance at probes

Measured device

INPUT

OUTPUT

OPEN

TIMING DIAGRAM

NOTE 1 TEST CIRCUIT

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