Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54585P/FP

8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

50

—

—

—

—

—

—

1000

—

1.3

1.0

0.95

8.7

1.5

—

2500

—

2.4

1.6

1.8

18

2.4

100

—

V

V

µA

—

V

mA

V

mA

V

mA

V

W

°C

°C

–0.5 ~ +50

500

–0.5 ~ +30

500

50

1.79(P)/1.10(FP)

–20 ~ +75

–55 ~ +125

V

V

Parameter

—

—

—

—

0

3.85

3.4

0

50

0.6

Limits

Symbol

Unit

0

0

—

—

400

200

30

mA

V

Symbol

Unit

Parameter

Test conditions

Limits

min

max

+ : The typical values are those measured under ambient temperature (Ta) of 25

°C. There is no guarantee that these values are obtained under any

conditions.

ns

ns

—

—

12

240

—

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

Ratings

Unit

Symbol

Parameter

Conditions

Collector-emitter voltage

Collector current

Input voltage

Clamping diode forward current

Clamping diode reverse voltage

Power dissipation

Operating temperature

Storage temperature

Output, H

Current per circuit output, L

Ta = 25

°C, when mounted on board

min

typ

max

Output voltage

Duty Cycle

P : no more than 6%

FP : no more than 4%

≤ 400mA

≤ 200mA

“H” input voltage

“L” input voltage

Collector current

(Current per 1 cir-

cuit when 8 circuits

are coming on si-

multaneously)

Duty Cycle

P : no more than 34%

FP : no more than 20%

µA

°C

Collector-emitter breakdown voltage

Clamping diode forward voltage

Clamping diode reverse current

DC amplification factor

Collector-emitter saturation voltage

Input current

Turn-on time

Turn-off time