MMBTA06 datasheet(1/2 Pages) DIOTEC

номер детали	MMBTA06

подробное описание детали	SMD High Voltage NPN Transistors

PDF	2 Pages

Scroll/Zoom	100%

производитель	DIOTEC [Diotec Semiconductor]

домашняя страница	http://www.diotec.com

Logo

1 / 2 page

MMBTA06

SMD High Voltage NPN Transistors

SMD Hochspannungs-NPN-Transistoren

IC

= 500 mA

hFE > 100

Tjmax = 150°C

VCEO = 80 V

Ptot = 250 mW

Version 2018-01-18

SOT-23

(TO-236)

1 = B

2 = E

3 = C

Dimensions - Maße [mm]

Typical Applications

Signal processing,

Switching, Amplification

Commercial grade 1)

Typische Anwendungen

Signalverarbeitung,

Schalten, Verstärken

Standardausführung 1)

Features

General Purpose

Compliant to RoHS, REACH,

Conflict Minerals 1)

Besonderheiten

Universell anwendbar

Konform zu RoHS, REACH,

Konfliktmineralien 1)

Mechanical Data 1)

Mechanische Daten 1)

Taped and reeled

3000 / 7“

Gegurtet auf Rolle

Weight approx.

0.01 g

Gewicht ca.

Case material

UL 94V-0

Gehäusematerial

Solder & assembly conditions

260°C/10s

Löt- und Einbaubedingungen

MSL = 1

Type

Code

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

1GM

MMBTA56

Maximum ratings 2)

Grenzwerte 2)

Collector-Emitter-voltage – Kollektor-Emitter-Spannung

B open

VCEO

80 V

Collector-Base-voltage – Kollektor-Basis-Spannung

E open

VCBO

80 V

Emitter-Base-voltage – Emitter-Basis-Spannung

C open

VEBO

4 V

Power dissipation – Verlustleistung

Ptot

250 mW 3)

Collector current – Kollektorstrom

DC

IC

500 mA

Base current – Basisstrom

I

B

100 mA

Peak Base current – Basis-Spitzenstrom

IBM

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-55...+150°C

-55…+150°C

Characteristics

Kennwerte

Tj = 25°C

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 4)

- VCE = 1 V

- IC = 10 mA

- IC = 100 mA

hFE

100

–

1

Please note the detailed information on our website or at the beginning of the data book

Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches

2

TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben

3

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

4

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

1

Pb

RoHS

1.1

+0.1

0.4+0.1

2.9 ±0.1

1

2

3

Type

Code

1.9±0.1

-0.05

-0.2

Аналогичный номер детали - MMBTA06

производитель	номер детали	датащи	подробное описание детали
Transys Electronics	MMBTA06	139Kb / 1P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Samsung semiconductor	MMBTA06	28Kb / 1P	NPN (DRIVER TRANSISTOR)
Fairchild Semiconductor	MMBTA06	149Kb / 4P	NPN General Purpose Amplifier
Diodes Incorporated	MMBTA06	45Kb / 2P	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30037 Rev. C-2
General Semiconductor	MMBTA06	56Kb / 2P	Small Signal Transistors (NPN)

More results

Аналогичное описание - MMBTA06

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	PMST5550	57Kb / 8P	NPN high-voltage transistors 1999 Apr 29
Seme LAB	2N3439	18Kb / 2P	HIGH VOLTAGE NPN TRANSISTORS
Weitron Technology	MPSA44	895Kb / 4P	High-Voltage NPN Transistors
Guangdong Kexin Industr...	BSR19	39Kb / 2P	NPN High-Voltage Transistors
Guangdong Kexin Industr...	BST39	52Kb / 2P	NPN High-Voltage Transistors
Diotec Semiconductor	MMBTA42	152Kb / 2P	SMD High Voltage NPN Transistors
	MMBTA06	127Kb / 2P	SMD High Voltage NPN Transistors
	MMBTA06	133Kb / 2P	SMD High Voltage NPN Transistors
	PZTA42	164Kb / 2P	SMD High Voltage NPN Transistors
	DI2579N	580Kb / 3P	SMD High Voltage NPN Transistors SMD Hochspannungs-NPN-Transistoren Version 2022-12-12

More results

MMBTA06 датащи(PDF) 1 Page - Diotec Semiconductor

MMBTA06 датащи(HTML) 1 Page - Diotec Semiconductor

Аналогичный номер детали - MMBTA06

Аналогичное описание - MMBTA06

Html Pages

1 2

датащи скачать

ссылки URL