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DMN60H080DS датащи(PDF) 3 Page - Diodes Incorporated

номер детали DMN60H080DS
подробное описание детали  N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN60H080DS датащи(HTML) 3 Page - Diodes Incorporated

  DMN60H080DS Datasheet HTML 1Page - Diodes Incorporated DMN60H080DS Datasheet HTML 2Page - Diodes Incorporated DMN60H080DS Datasheet HTML 3Page - Diodes Incorporated DMN60H080DS Datasheet HTML 4Page - Diodes Incorporated DMN60H080DS Datasheet HTML 5Page - Diodes Incorporated DMN60H080DS Datasheet HTML 6Page - Diodes Incorporated DMN60H080DS Datasheet HTML 7Page - Diodes Incorporated  
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DMN60H080DS
Document number: DS39475 Rev. 3 - 2
3 of 7
www.diodes.com
May 2017
© Diodes Incorporated
DMN60H080DS
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.090
0.100
0
2
4
6
8
10
12
14
16
18
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 2.9V
V
GS = 3.0V
V
GS = 3.2V
V
GS = 10.0V
V
GS = 8.0V
V
GS = 3.3V
V
GS = 3.5V
V
GS = 6.0V
V
GS =4.0V
V
GS = 4.50V
V
GS = 5.0V
40
50
60
70
80
90
100
0
0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS = 10V
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
12
14
16
18
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 60mA
0
20
40
60
80
100
120
140
160
180
200
220
0
0.02
0.04
0.06
0.08
0.1
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
TJ=-55℃
TJ=25℃
TJ=85℃
TJ=150℃
TJ=125℃
V
GS = 10V
0
0.5
1
1.5
2
2.5
3
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS = 10V, ID = 60mA
V
GS = 4.5V, ID = 60mA
0.001
0.01
0.1
1
2
3
4
5
6
7
8
9
10
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = 10V
TJ=-55℃
TJ=25℃
TJ=85℃
TJ=125℃
TJ=150℃



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