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RFLW5N датащи(PDF) 4 Page - Vishay Siliconix |
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RFLW5N датащи(HTML) 4 Page - Vishay Siliconix |
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4 / 5 page ![]() RFLW 5N www.vishay.com Vishay Electro-Films Revision: 17-Sep-13 4 Document Number: 61087 For technical questions, contact: efi@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL COMPONENT PERFORMANCE Inductance vs. Frequency Quality Factor vs. Frequency LAYOUT CONSIDERATIONS The RF spiral inductor is electrically connected to the circuit by wire bonds. All wire bonds add parasitic inductance and resistance, as shown in the schematic drawing above. It is important to note that setup variations might affect the performance of the component. Special care must be given to minimize these effects by careful design of the component host circuit board. The following aspects should be considered: • Bond wire length should be minimized. The bond wire added inductance can be roughly estimated at 0.75 nH per mil of 1.25 mil diameter gold wire. • Any ground plane directly under the component will increase the parasitic shunt capacitance. This will cause self resonance at lower frequencies. • The epoxy used to attach the component is the limiting factor in power handling. Applications that require high power handling are recommended to use high temperature epoxy and to insure adequate heat sinking. CUSTOM DESIGNED SPIRAL INDUCTORS Vishay EFI will custom design and measure additional values and form factors upon request. Typical inductance density is limited to: 110 nH/mm2 It is important to note, that both series resistance and SRF characteristics will degrade as inductance values approach the inductance density limit presented above. 10 100 1000 10 000 Frequency (MHz) 350 300 250 200 150 100 50 0 18 nH 47 nH 80 nH 52 nH 100 nH 120 nH 150 nH 10 100 1000 10 000 Frequency (MHz) 22 17 12 7 2 - 3 18 nH 47 nH 80 nH 52 nH 100 nH 120 nH 150 nH |
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