DMN3016LDV datasheet(2/7 Pages) DIODES

2 / 7 page

PowerDI is a registered trademark of Diodes Incorporated.

DMN3016LDV

Document number: DS38744 Rev. 2 - 2

2 of 7

www.diodes.com

July 2016

DMN3016LDV

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current, VGS = 10V (Note 7)

Steady

State

TC = +25°C

TC = +70°C

Maximum Body Diode Forward Current (Note 6)

Pulsed Drain Current (380

μs pulse, Duty cycle = 1%)

IDM

Avalanche Current (L = 0.1mH) (Note 8)

IAS

Avalanche Energy (L = 0.1mH) (Note 8)

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

134

°C/W

t<10s

Total Power Dissipation (Note 6)

1.8

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 7)

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

μA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

1.4

2.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

9.5

VGS = 10V, ID = 7A

VGS = 4.5V, ID = 7A

Diode Forward Voltage

VSD

0.70

1.0

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss

1184

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

137

Reverse Transfer Capacitance

Crss

107

Gate Resistance

3.0

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

9.5

VDS = 15V, ID = 12A

Total Gate Charge (VGS = 10V)

Gate-Source Charge

Qgs

3.8

Gate-Drain Charge

Qgd

4.1

Turn-On Delay Time

tD(ON)

4.5

VDD = 15V, VGS = 10V,

RL = 1.5Ω, RG = 3Ω

Turn-On Rise Time

3.3

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

3.6

Reverse Recovery Time

tRR

9.3

IF = 12A, di/dt = 500A/μs

Reverse Recovery Charge

QRR

2.5

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Thermal resistance from junction to soldering point (on the exposed drain pad).

8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

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