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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSM120N06LCP датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM120N06LCP датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM120N06LCP Taiwan Semiconductor 1 Version: A1602 N-Channel Power MOSFET 60V, 70A, 12m Ω FEATURES ● Low R DS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and R g tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● Secondary Synchronous Rectification KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS = 10V 12 m Ω VGS = 4.5V 15 Qg 18 nC TO-252(DPAK) Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25°C ID 70 A TA = 25°C 10 Pulsed Drain Current (Note 1) IDM 280 A Single Pulse Avalanche Current (Note 2) IAS 20 A Single Pulse Avalanche Energy (Note 2) EAS 60 mJ Total Power Dissipation TC = 25°C PD 125 W TC = 125°C 25 Total Power Dissipation TA = 25°C PD 2.6 W TA = 125°C 0.5 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1 °C/W Junction to Ambient Thermal Resistance RӨJA 49 °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. |
Аналогичный номер детали - TSM120N06LCP |
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Аналогичное описание - TSM120N06LCP |
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