TSM2NB65 datasheet(2/8 Pages) TSC

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TSM2NB65

Taiwan Semiconductor

Version:B1706

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

(Note 3)

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

650

Gate Threshold Voltage

VDS = VGS, ID = 250µA

VGS(TH)

2.5

Gate Body Leakage

VGS = ±20V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = 650V, VGS = 0V

IDSS

µA

Drain-Source On-State Resistance

VGS = 10V, ID = 1A

RDS(ON)

Forward Transfer Conductance

VDS = 10V, ID = 1A

gfs

2.5

Dynamic

(Note 4)

Total Gate Charge

VDS = 520V, ID = 2A,

VGS = 10V

Gate-Source Charge

Qgs

2.2

Gate-Drain Charge

Qgd

Input Capacitance

VDS = 25V, VGS = 0V,

F = 1.0MHz

Ciss

390

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate Resistance

f = 1.0MHz, open drain

0.8

2.5

7.5

Switching

(Note 5)

Turn-On Delay Time

VGS = 10V, ID = 2A,

VDD = 325V, RG =25Ω

td(on)

8.2

Turn-On Rise Time

23.2

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Source-Drain Diode

(Note 3)

Diode Forward Voltage

IS = 2A, VGS = 0V

VSD

1.2

Notes:

Pulse width limited by the maximum junction temperature

L = 20mH, IAS = 1.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25

Pulse test: PW

≤ 300µs, duty cycle ≤ 2%

For DESIGN AID ONLY, not subject to production testing.

Essentially Independent of Operating Temperature.

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