APM2095PU datasheet(2/9 Pages) ANPEC

2 / 9 page

 ANPEC Electronics Corp.

Rev. A.1 - Nov., 2003

www.anpec.com.tw

APM2095P

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V , IDS=-250

µA

-20

IDSS

Zero Gate Voltage Drain

Current

VDS=-16V , VGS=0V

-1

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS , IDS=-250

µA

-0.5

-0.7

-1

IGSS

Gate Leakage Current

VGS=

±10V , V

DS=0V

±100

VGS=-4.5V , IDS=-3.6A

RDS(ON)

Drain-Source On-state

Resistance

VGS=-2.5V , IDS=-2A

100

125

Ω

VSD

Diode Forward Voltage

ISD=-1A , VGS=0V

-0.7

-1.3

Dynamic

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=-10V , IDS=-3.6A

VGS=-4.5V

1.5

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

VDD=-10V , IDS=-3.6A ,

VGEN=-4.5V , RG=6

Ω

Ciss

Input Capacitance

550

Coss

Output Capacitance

170

Crss

Reverse Transfer Capacitance

VGS=0V

VDS=-15V

Frequency=1.0MHz

120

Symbol

Parameter

Rating

Unit

TC=25°C

Maximum Power Dissipation

TC=100°C

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

RθJA

Thermal Resistance – Junction to Ambient

RθJC

Thermal Resistance – Junction to Case

2.5

°C/W

*Mounted on 1in

2 pad area of PCB.

Notes

a : Pulse test ; pulse width

≤300µs, duty cycle ≤ 2%

b : Guaranteed by design, not subject to production testing

Absolute Maximum Ratings Cont. (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

APM2095PU датащи(PDF) 2 Page - Anpec Electronics Coropration

APM2095PU датащи(HTML) 2 Page - Anpec Electronics Coropration

Html Pages

1 2 3 4 5 6 7 8 9

датащи скачать

ссылки URL