Pb Free Plating Product

80CPU02

Pb

80Amperes,200Volts Heatsink Common Cathode Ultra Fast Recovery Rectifiers

MBRF20100CT thru MBRF20200CT

80CPU02

© 2006 Thinki Semiconductor Co., Ltd.

http://www.thinkisemi.com/

Page 1/2

Rev.08C

·

Ultrafast Recovery Time

·

Soft Recovery Characteristics

·

Low Recovery Loss

·

Low Forward Voltage

·

High Surge Current Capability

·

Low Leakage Current

APPLICATION

GENERAL DESCRIPTION

PRODUCT FEATURE

80CPU02 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.

TO-3PB(TO-3PN)

Internal Configuration

Cathode(Bottom Side Metal Heatsink)

Cathode

Anode

Base Backside

—

—

—

—

—

—

—

—

—

—

Anode

Absolute Maximum Ratings

Parameter

Symbol

Test Conditions

Values

Units

Repetitive peak reverse voltage

200

V

Continuous forward current

Tc =110

°C

80

Single pulse forward current

Tc =25

°C

800

Maximum repetitive forward current

Square wave, 20kHZ

320

A

Operating junction

Tj

175

°C

Storage temperatures

Tstg

-55 to +175

°C

Electrical characteristics (Ta=25

°Cunless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ.

Max.

Units

Breakdown voltage

Blocking voltage

200

0.97

1.20

Forward voltage

(Per Diode)

°C

0.86

1.00

V

10

Reverse leakage

current(Per Diode)

Tj=150

100

µ

A

37

50

Reverse recovery

time(Per Diode)

25

40

ns

Thermal characteristics

Paramter

Symbol

Typ

Units

Junction-to-Case

0.8

℃

/W