AD8616ARM datasheet(3/5 Pages) AD

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Preliminary Technical Data

AD8615/AD8616/AD8618

Rev PrA 6/2/03

ELECTRICAL CHARACTERISTICS (@V

S=+5.0V, VCM = VS/2, TA=+25°C unless otherwise noted)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

INPUT CHARACTERISTICS

Offset Voltage

VOS

VCM = 0V to 5V

300

µV

-40°< TA < +125°C

750

µV

Input Bias Current

0.2

-40°< TA < +85°C

100

-40°< TA < +125°C

1000

Input Offset Current

IOS

0.1

-40°< TA < +85°C

-40°< TA < +125°C

500

Input Voltage Range

Common-Mode Rejection Ratio

CMRR

VCM = 0V to 5V

Large Signal Voltage Gain

AVO

VO= 0.5V to 4.5V,

V/mV

RL = 2 kΩ , VCM= 0V

Offset Voltage Drift

∆V

OS/∆T

µV/°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

IL = 1mA

4.925

4.975

IL = 10mA

4.7

4.77

-40°C to +125°C

4.6

Output Voltage Low

VOL

IL = 1mA

Output Voltage High

VOL

IL = 10mA

125

175

-40°C to +125°C

250

Output Current

IOUT

±50

Closed Loop Output Impedance

ZOUT

f=1 MHz, AV = 1

Ω

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = 2.7 V to 5.5 V

Supply Current/Amplifier

ISY

VO = 0V

1.3

2.0

-40°< TA < +125°C

TBD

DYNAMIC PERFORMANCE

Slew Rate

RL =2 kΩ

µs

Settling Time

To 0.01%

<.5

µs

Full Power Bandwidth

BWp

<1% Distortion

TBD

kHz

Gain Bandwidth Product

GBP

MHz

Phase Margin

Øo

degrees

NOISE PERFORMANCE

Voltage Noise Density

f=1kHz

nV/

√Hz

Voltage Noise Density

f=10kHz

nV/

√Hz

Current Noise Density

f=1kHz

0.05

pA/

√Hz

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