TLP321 datasheet(4/9 Pages) TOSHIBA

номер детали	TLP321

подробное описание детали	TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

PDF	9 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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4 / 9 page

TLP321,TLP321-2,TLP321-4

2002-09-25

Recommended Operating Conditions

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Supply voltage

VCC

―

Forward current

―

Collector current

―

Operating temperature

Topr

-25

―

°C

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward voltage

IF =10 mA

1.0

1.15

1.3

Reverse current

VR =5 V

—

µA

Capacitance

V = 0, f = 1MHz

—

Collector

-emitter

breakdown voltage

V(BR) CEO

IC = 0.5mA

—

Emitter

-collector

breakdown voltage

V(BR) ECO

IE = 0.1mA

—

VCE = 48V

—

100

Collector dark current

ICEO

VCE = 48V, Ta = 85°C

—

µA

Capacitance

(collector to emitter)

CCE

V = 0, f = 1MHz

—

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Condition

MIn.

Typ.

Max.

Unit

—

600

Current transfer ratio

IC / IF

IF = 5mA, VCE = 5V

Rank GB

100

—

600

—

Saturated CTR

IC / IF (sat)

IF = 1mA, VCE = 0.4V

Rank GB

—

IC = 2.4mA, IF = 8mA

—

0.4

—

0.2

—

Collector

-emitter

saturation voltage

VCE (sat)

IC = 0.2mA, IF = 1mA

Rank GB

—

0.4

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