| производитель | номер детали | датащи | подробное описание детали |
 IXYS Corporation |
IXBA10N300HV
|
267Kb / 6P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
|
IXBA12N300HV
|
253Kb / 5P |
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
|
|
IXBA14N300HV
|
365Kb / 6P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
|
IXBA16N170AHV
|
168Kb / 2P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
|
IXBF10N300C
|
226Kb / 6P |
High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor
|